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Table 1 - Applications, part names and parameters. For further information please refer to data sheets.
Application
Examples
Infineon
Part Name
V RWM
[V]
Protected
lines
ESD Ipp
IEC 61000-4-2 IEC61000-4-5
contact [kV] (8/20μs) [A]
Vc (2) [V]
I R
Ct
[pF]
Package
ESD5V3S1B-02LS (4)
ESD5V3S1U-02LS (4)
±5.3
+5.3
-8/14
1
1
1
16.5
16.5
15
2
2
1
15 (max)
15 (max)
23
1uA max
0.1uA max
<1nA
20 (max)
40 (max)
4.0
TSSLP-2
(0201)
TSSLP-2
TSSLP-2
Audio/Speaker
±5.3
1
20
5.5
11
1uA max
17
TSLP-2
Headset Lines
Trackball
Keypad/Keyboard
Power Lines
ESD5V3S1U-02LRH
ESD5V3L1U-02LRH
+5.3
+5.3
-8/14
-8/14
1
1
1
1
20
30
25
15
5.5
6
2.5
1
11
10
26/20 @±15kV (3)
23
1uA max
<1nA
<1nA
<1nA
35
1.0
8.5
4.0
TSLP-2
TSLP-2
TSLP-2
TSLP-2
-8/14
+5.3
2
1
15
20
1
3
26/20 @±15kV
12
(3)
<1nA
<10 nA
4.0
0.4
TSLP-3
TSSLP-2
USB2.0/3.0
HDMI1.3/1.4
DisplayPort
DVI
GPS antenna
FM radio antenna
DVB-T/H w/o GSM
UWB w/o GSM
ESD5V3L1U-02LRH
+5.3
+5.3
+5.3
+5.3
±5.3
±5.3
+5.3
50
50
1
1
1
2
1
1
1
1
1
20
20
20
20
20
20
30
20
15
3
3
3
3
3
3
6
10
5
12
12
12
12
16
16
10
12
6
<1 nA
<10 nA
<1 nA
<1 nA
<1 nA
<1 nA
<1nA
100nA (max)
20nA
0.4
0.4
0.4
0.4
0.2 (1GHz)
0.2 (1GHz)
1.0
0.8 (1GHz)
0.4 (1GHz)
TSSLP-2
TSLP-2
TSLP-2
TSLP-3
TSSLP-2
(0201)
TSLP-2
TSLP-2
TSLP-4
(0402)
TSLP-4
(0402)
Typical values are given unless other indicated.
(1) Line to ground capacitance at 0V and 1MHz unless indicated.
(3) VESD according to IEC61000-4-2, see data sheets.
In addition to surviving multiple electrostatic discharge
events without degradation, an efficient protection device
must be able to successfully shunt the dangerous ESD
current from the downstream equipment being protected.
Therefore, the clamping behavior of the protection device
has to match to the protected equipment in order to assure
that the current through the protected I/O pins is minimi-
zed. Very low dynamic resistance relative to the protected
system and very fast response time are two prime charac-
teristics that protection devices must provide to accomplish
this task.
(2) Ipp according to IEC61000-4-5 unless indicated by (3)
(4) Preliminary data
State of the art Infineon TVS diodes have dynamic re-
sistance values down to 0.27 ? (Figure 2) at all transient
current levels, resulting in extremely low and stable clam-
ping voltages with response times far below 1ns. This key
feature confirms Infineon TVS diodes as the ideal solution
for protection of low voltage signal lines in wireless applica-
tions.
Infineon offers a variety of 0201 and 0402 EIA-equivalent
devices designed to protect one or two data lines with a
single component. Depending on the diode type, these
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